Samsung Electronics, a company that has always been at the forefront when it comes to innovative solutions, has expressed its desire to develop next-generation memory solutions. The announcement that was posted on the official Samsung Newsroom reads, “Samsung Electronics, a world leader in advanced semiconductor technology, made a case today to accommodate the rise of technologies like 5G and AI, as well as the COVID-19-accelerated explosion of data, with the memory of tomorrow that will need to offer new levels of power performance and connectivity unlike anything seen before.”
Jinman Han, the Executive Vice President and Head of Memory Global Sales and Marketing at Samsung Electronics announced it at the 2021 Global Semiconductor Alliance Memory+ Conference. Han expressed the company’s desire to work with the entire industry to develop the next-gen memory solutions. “I believe our industry will rise to this challenge not by innovating independently, but by finding solutions together,” said Han. “Going forward, we’ll develop a new IT ecosystem together that is much more powerful and sustainable, one which will be needed to architect the digital future.”
The memory industry has always catered to the users’ demand for larger capacities while also increasing speeds for the same as well as a higher bandwidth. However, the memory industry also needs to keep in mind the larger picture beyond their immediate consumers and their demands so as to arrive at the next-level solutions when it comes to memory.
Samsung’s very public desire of working with the whole industry stems from its belief that a revolutionary change is due to the memory computation and subsystems especially due to the ongoing rise in data. Likewise, Samsung is also leading in the development of technologies such as HBM-PIM, AXDIMM, Smart SSDs, and CXL-based DRAM.
On the other hand, the South Korean tech giant is also engaged in optimizing thermal performance by advancing innovations like Hybrid Copper Bonding (HCB), while its V-NAND technologies continue to redefine how memory is stacked.