On November 19, foreign media, ComputerBase shared news from Samsung Tech Day 2021, held on November 15 in San Jose, California where the South Korean-based Mobile manufacturer firm Samsung disclosed its future development blueprints innovations in-memory technology peculiarly.

According to ComputerBase, the South Korean company is keenly developing the descendant to DDR5 technology, Perhaps DDR6 could perform double the speed and bandwidth of DDR5. In addition, DDR5 memory has made a debut in the tech market apace with Intel 12th Gen Core ‘Alder Lake-S’ series in November; It would possibly take up to 2023 to expect affordable pricing on DDR5 memory technology. Meantime, Samsung is gearing up for DDR6. However, the DDR6 has not been officially codified by JEDEC. Moreover, the default configuration should be around 12800 Mbit/s. The company confirmed that the DDR6 memory technology is still in the early development phase, so the data shared by Samsung might be changed in the upcoming days; ComputerBase reported that DDR6 overclocking memory is expected to reach DDR6-17000.

Furthermore, each module of DDR6 memory will feature four channels which are doubled compared to DDR5, and the number of memory banks will reach 64, quadrupling the memory of DDR4 standard. Samsung also unveiled some crucial information about GDDR6 standards. Seemingly, Samsung is now developing the GDDR6+ standard, which offers a blazingly fast speed of 24 Gbps; this is moderately higher than the 18 Gbps provided by the current GDDR6 standard shortly be manufactured using Samsung’s 1z nm process( Samsung’s third-generation).

Samsung also adds GDDR7 to its futuristic blueprints, but evidently, no more details are sticking out. GDDR7 technology is developed to increase memory bandwidth to 32 Gbps and feature ‘real-time error protection feature,’ Moreover, Samsung has not provided any necessary details on it. Still, hopefully, we can expect some more information in the upcoming days. Samsung is also planning to begin the mass production of HBM3 (High-Bandwidth-Memory Gen3) in the Q2 of 2022.

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