Kazuki Yosda, a professor at Saga University in Japan, and Orbray, a precision parts manufacturer in Japan, have developed a power semiconductor made of diamond that operates at 875 megawatts per square centimeter.
The new is said to be the world’s highest output power value semiconductor. In recent years, progress has been made in the development of semiconductors for power control that use diamonds, known as ultimate power semiconductors.
With an estimated 2090 megawatts of output power, this power semiconductor ranks second only to gallium nitride products among all semiconductors and has the greatest output power value of any existing diamond semiconductor in the world.
Diamond semiconductors have superior performance compared to the next-generation power semiconductors gallium nitride and silicon carbide, including high voltage resistance and power loss that is predicted to be reduced to 1/50,000 of silicon products.
By 2050, diamond power semiconductors—which are also very heat- and radiation-resistant—are anticipated to be essential parts of man-made spacecraft.
Diamond material possesses strong breakdown fields, high carrier saturation drift rates, and great carrier mobility. For making high-power, high-temperature, and high-frequency devices, it is the perfect material.
Due to its wide band gap, high thermal conductivity, breakdown electric field strength, and exceptionally high charge mobility (the electron mobility of CVD diamond is > 75000px2/Vs), diamond semiconductor devices can operate in extremely harsh conditions like high frequency, high power, high voltage, and strong radiation. It is said to be the ideal semiconductor substance.
About 150 million carats of real diamonds are produced annually worldwide, but more than 20 billion carats of synthetic diamonds, 95% of which are produced in mainland China, are produced annually.
