Xiaomi, the Chinese smartphone maker has launched Huami Amazfit Verge smartwatch through its subsidiary brand Huami, is the first smartwatch in the world to feature integrated with AI neural network. The Huangshan No.1 (MHS001) developed by Huami to come with 4-core artificial intelligence engines – Heart ID, ECG, ECG Pro, and Arrhythmia.
Huami, the subsidiary of Xiaomi is one of the popular makers of smartwatches in China and this time it has come up to launch its new products across the world; the Xiaomi Huami Amazfit verge smartwatch and its first Huangshan No. 1 SoC for wearable devices. Both the smartwatch and smart band are water-resistant and have continuous heart rate monitoring. The Huangshan No.1 is said to be the world’s first wearable processor integrated with AI neural network.
The band features ECG sensor to gather ECG data to identify health risks. It also has NFC with payment support and GPS.
As for the specification, the Xiaomi Amazfit Verge smartwatch features 1.3-inch (360 x 360 pixels) AMOLED display with Corning Gorilla Glass 3 protection. The watch is made out of unbreakable plastic and comes with a detachable silicone band. It supports GPS+GLONASS with 11 different sports modes, Wi-Fi and Bluetooth 4.0+BLE. It is powered by a dual-core 1.2GHz processor with 512MB RAM and 4 GB ROM.
The novelty's most highlighted feature is its all-day heart rate monitoring processor. This allows the watch to detect and inform the user about anomalous heart rate patterns. It also supports NFC based payments which makes it easier to make payments with support for AliPay and even UnionPay.
It also highlights; Accelerometer, Ambient Light Sensor, Gyroscope, a geomagnetic sensor, air pressure sensor, and wearing detection sensor along with Xiao AI assistant that supports MIJIA smart home app.
The Huangshan No. 1 is an artificial intelligence SoC with low power consumption which has an integrated AON module. It is an ultra-low-power sensor data collection module that can automatically transfer sensor data into the internal SRAM for faster and more stable data storage. It is regulated up to 240MHz and is engineered using the 55nm process. It is estimated to be available in the first half of 2019.